Ultra-low noise field-effect transistor from multilayer graphene

摘要

We present low-frequency electrical resistance fluctuations, or noise, ingraphene-based field-effect devices with varying number of layers. Insingle-layer devices the noise magnitude decreases with increasing carrierdensity, which behaved oppositely in the devices with two or larger number oflayers accompanied by a suppression in noise magnitude by more than two ordersin the latter case. This behavior can be explained from the influence ofexternal electric field on graphene band structure, and provides a simpletransport-based route to isolate single-layer graphene devices from those withmultiple layers.